SI4174DY-T1-GE3

Teknik Özellikler

Drain Currentmax Id

17 A

Package Description

HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

Drainsource On Resistancemax

0.0095 Ω

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

30 V

Tepe Reflow Sıcaklığı (°C)

260

JESD-609 Kodu

e3

Power Dissipationmax Abs

5 W

Jesd30 Code

R-PDSO-G8

Operating Temperaturemax

150 °C

Rohs Code

Yes

Yüzey Montaj

YES

Package Body Material

PLASTIC/EPOXY

REACH Uyumluluk Kodu

compliant

Saturation Current

1

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Package Shape

RECTANGULAR

Tepe Reflow Süresi (maks. sn)

30

Polaritychannel Type

N-CHANNEL

Jedec95 Code

MS-012AA

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Mode

ENHANCEMENT MODE

Exterior Housing Material

1

ECCN Kodu

EAR99

Package Style

SMALL OUTLINE

Number Of Terminals

8

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Formu

GULL WING

Part Life Cycle Code

Active

Terminal Kaplaması

Matte Tin (Sn)