SI3585CDV-T1-GE3

Teknik Özellikler

Package Description

HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Package Body Material

PLASTIC/EPOXY

Jesd30 Code

R-PDSO-G6

Package Style

SMALL OUTLINE

Jedec95 Code

MO-193AA

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipationmax Abs

1.4 W

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

30

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Part Life Cycle Code

Active

Saturation Current

1

Tepe Reflow Sıcaklığı (°C)

260

Rohs Code

Yes

Package Shape

RECTANGULAR

Terminal Kaplaması

Matte Tin (Sn)

ECCN Kodu

EAR99

Number Of Terminals

6

Operating Temperaturemax

150 °C

Ds Breakdown Voltagemin

20 V

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Id

3.9 A

Terminal Formu

GULL WING

Yüzey Montaj

YES

Transistor Element Material

SILICON

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Qualification Status

Not Qualified

Fabrika Tedarik Süresi

7 Weeks, 3 Days

Exterior Housing Material

2

Drainsource On Resistancemax

0.058 Ω

REACH Uyumluluk Kodu

compliant