SI3440ADV-T1-GE3

Teknik Özellikler

Drainsource On Resistancemax

0.38 Ω

REACH Uyumluluk Kodu

compliant

Exterior Housing Material

1

Operating Temperaturemin

-55 °C

Terminal Formu

GULL WING

Yüzey Montaj

YES

Operating Temperaturemax

150 °C

Number Of Terminals

6

Ds Breakdown Voltagemin

150 V

Operating Mode

ENHANCEMENT MODE

Feedback Capmax Crss

3 pF

Drain Currentmax Id

2.2 A

Polaritychannel Type

N-CHANNEL

Fabrika Tedarik Süresi

28 Weeks

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Part Life Cycle Code

Active

Saturation Current

1

Tepe Reflow Sıcaklığı (°C)

260

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

30

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Terminal Kaplaması

MATTE TIN

ECCN Kodu

EAR99

Rohs Code

Yes

Package Shape

RECTANGULAR

Package Body Material

PLASTIC/EPOXY

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Package Description

MO-193C, TSOP-6

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipationmax Abs

3.6 W

Jedec95 Code

MO-193AA

Package Style

SMALL OUTLINE

Jesd30 Code

R-PDSO-G6