SI2319DS-T1-E3

Teknik Özellikler

Terminal Pozisyonu

DUAL

Drainsource On Resistancemax

0.082 Ω

Operating Mode

ENHANCEMENT MODE

Configuration

SINGLE WITH BUILT-IN DIODE

Jesd30 Code

R-PDSO-G3

Rohs Code

Yes

Package Body Material

PLASTIC/EPOXY

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

Operating Temperaturemin

-55 °C

Operating Temperaturemax

150 °C

Package Style

SMALL OUTLINE

Saturation Current

1

REACH Uyumluluk Kodu

compliant

Number Of Terminals

3

Ds Breakdown Voltagemin

40 V

Package Shape

RECTANGULAR

Terminal Formu

GULL WING

Tepe Reflow Sıcaklığı (°C)

260

Package Description

TO-236, SOT-23, 3 PIN

Jedec95 Code

TO-236AB

Yüzey Montaj

YES

Polaritychannel Type

P-CHANNEL

Feedback Capmax Crss

65 pF

Drain Currentmax Id

2.3 A

Qualification Status

Not Qualified

Terminal Kaplaması

MATTE TIN

Part Life Cycle Code

Not Recommended

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Exterior Housing Material

1

JESD-609 Kodu

e3

Tepe Reflow Süresi (maks. sn)

30

Transistor Application

SWITCHING

ECCN Kodu

EAR99