SQJ848EP-T1_GE3

Teknik Özellikler

Drain To Source Resistance

9 mΩ

Drain To Source Breakdown Voltage

40 V

Pin Sayısı

8

Radyasyon Dayanımı

No

Maks. Çalışma Sıcaklığı

175 °C

Rds On Max

9 mΩ

Gate To Source Voltage Vgs

20 V

Min. Çalışma Sıcaklığı

-55 °C

Continuous Drain Current Id

30 A

Rise Time

10 ns

Fall Time

17 ns

Power Dissipation

68 W

Element Configuration

Single

Input Capacitance

2.5 nF

Nominal Vgs

2 V

RoHS

Compliant

Turn Off Delay Time

38 ns

Drain To Source Voltage Vdss

40 V

Montaj

Surface Mount

Turn On Delay Time

18 ns

Number Of Elements

1

Max Power Dissipation

68 W