SI5517DU-T1-GE3

Teknik Özellikler

Kind Of Channel

enhanced

Gate Charge

14/16nC

Certificates

RoHS compliant

Power Dissipation

8.3W

Type Of Transistor

N/P-MOSFET

Gross Weight

0.1g

Drainsource Voltage

20/-20V

Mounting

SMD

Kind Of Package

reel

Onstate Resistance

131/55mΩ

Kind Of Package1

tape

Polarisation

unipolar

Gatesource Voltage

±8V

Drain Current

6/-6A