SI4963BDY-T1-GE3

Teknik Özellikler

Gross Weight

0.1g

Drainsource Voltage

-20V

Case

SO8

Gatesource Voltage

±12V

Power Dissipation

2W

Kind Of Package1

tape

Certificates

RoHS compliant

Type Of Transistor

P-MOSFET x2

Drain Current

-6.5A

Kind Of Package

reel

Onstate Resistance

50mΩ

Pulsed Drain Current

-40A

Mounting

SMD

Polarisation

unipolar

Gate Charge

21nC

Kind Of Channel

enhanced