SI4590DY-T1-GE3

Teknik Özellikler

Case

SO8

Gate Charge

4/11.6nC

Power Dissipation

2.3/2.7W

Kind Of Package1

tape

Kind Of Channel

enhanced

Polarisation

unipolar

Drainsource Voltage

100/-100V

Gatesource Voltage

±20V

Kind Of Package

reel

Certificates

RoHS compliant

Type Of Transistor

N/P-MOSFET

Drain Current

4.5/-2.7A

Mounting

SMD

Onstate Resistance

57/183mΩ

Gross Weight

0.2g