SI3590DV-T1-GE3

Teknik Özellikler

Power Dissipation

0.53W

Gate Charge

4.5/6nC

Case

TSOP6

Gross Weight

0.1g

Kind Of Package1

tape

Drainsource Voltage

30/-30V

Pulsed Drain Current

8A

Kind Of Channel

enhanced

Type Of Transistor

N/P-MOSFET

Kind Of Package

reel

Polarisation

unipolar

Gatesource Voltage

±12V

Certificates

RoHS compliant

Mounting

SMD

Drain Current

2/-1.3A

Onstate Resistance

77/170mΩ