FES8GT-E3/45

Teknik Özellikler

Features Of Semiconductor Devices1

ultrafast switching

Max Offstate Voltage

0.4kV

Gross Weight

1.79g

Kind Of Package

tube

Case

TO220AC

Mounting

THT

Max Forward Voltage

1.3V

Semiconductor Structure

single diode

Reverse Recovery Time

50ns

Features Of Semiconductor Devices

glass passivated

Max Forward Impulse Current

125A

Load Current

8A

Heatsink Thickness

1.14...1.39mm

Type Of Diode

rectifying

Certificates

RoHS compliant

Kapasitans

85pF

Leakage Current

0.5mA