D5030UK

Teknik Özellikler

Process Technology

DMOS

Maximum Gate Source Leakage Current Na

1000

Package Height

5.08

Package Width

10.16

Mounting

Screw

Package Length

34.03

Eccn Us

EAR99

Maximum Gate Source Voltage V

±20

Pin Sayısı

5

Number Of Elements Per Chip

2

Typical Drain Efficiency

50(Min)

Typical Power Gain Db

16(Min)

Minimum Frequency Mhz

1

Typical Reverse Transfer Capacitance Vds Pf

12(Max)@50V

Supplier Package

Case DR

Material

Si

Maximum Frequency Mhz

250

Typical Forward Transconductance S

6.4(Min)

Maximum Drain Source Voltage V

125

Hts

8541.29.00.95

Maximum Vswr

20

Parça Durumu

Active

Maximum Idss Ua

8000

Minimum Operating Temperature C

-65

Pcb Changed

5

Maximum Continuous Drain Current A

24

Configuration

Dual Common Source

Military

No

RoHS Durumu

RoHS Compliant

Typical Output Capacitance Vds Pf

200(Max)@50V

Typical Input Capacitance Vds Pf

480(Max)@50V

Maximum Operating Temperature C

200

Maximum Power Dissipation Mw

583000

Maximum Gate Threshold Voltage V

7