TRS20N65FB,S1Q

Teknik Özellikler

Reverse Recovery Time Trr

0 ns

Ifsm Forward Surge Current

158 A

Operating Temperature Junction

175°C

Voltage Forward Vf Max If

1.6 V @ 10 A

Vrrm Repetitive Reverse Voltage

650 V

Current Average Rectified Io Per Diode

10A (DC)

Vf Forward Voltage

1.6 V

Technology

SiC

Pd Power Dissipation

214 W

Fabrika Paket Adedi

30

Voltage Dc Reverse Vr Max

650 V

Diode Configuration

1 Pair Common Cathode

Kılıf / Paket

TO-247-3

Tedarikçi Cihaz Paketi

TO-247

Temel Ürün No

TRS20N65

Speed

No Recovery Time > 500mA (Io)

RoHS

Details

Ürün Tipi

Schottky Diodes & Rectifiers

Montaj Tipi

Through Hole

Ir Reverse Current

500 nA

Configuration

Dual Anode Common Cathode

If Forward Current

20 A

Ambalaj

Tube

Paket

Tube

Ürün Durumu

Active

Current Reverse Leakage Vr

50 μA @ 650 V

Maks. Çalışma Sıcaklığı

+ 175 C

Montaj Stili

Through Hole

Diode Type

Silicon Carbide Schottky