SSM6N7002KFU,LF

Teknik Özellikler

Continuous Drain Current Id

300mA

Gate Charge Qg Max Vgs

0.6nC @ 4.5V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

RoHS Compliant

Fabrika Tedarik Süresi

12 Weeks

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Max

285mW

Parça Durumu

Active

Max Power Dissipation

285mW

Reference Standard

AEC-Q101

Yayın Yılı

2015

Fet Type

2 N-Channel (Dual)

Vgsth Max Id

2.1V @ 250μA

Drain To Source Voltage Vdss

60V

Montaj

Surface Mount

Montaj Tipi

Surface Mount

Terminal Formu

GULL WING

Drainsource On Resistancemax

1.75Ohm

Jesd30 Code

R-PDSO-G6

Rds On Max Id Vgs

1.5 Ω @ 100mA, 10V

Ds Breakdown Voltagemin

60V

Terminal Sayısı

6

Çalışma Sıcaklığı

150°C TJ

Transistor Application

SWITCHING

Number Of Elements

2

Drain Currentmax Abs Id

0.3A

Fet Feature

Standard

Input Capacitance Ciss Max Vds

40pF @ 10V

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE