SSM6N61NU,LF

Teknik Özellikler

Kılıf / Paket

6-WDFN Exposed Pad

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

3.6nC @ 4.5V

Continuous Drain Current Id

4A

Parça Durumu

Active

Fabrika Tedarik Süresi

12 Weeks

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Max

2W

RoHS Durumu

RoHS Compliant

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

1V @ 1mA

Fet Type

2 N-Channel (Dual)

Yayın Yılı

2016

Max Power Dissipation

2W

Montaj

Surface Mount

Montaj Tipi

Surface Mount

Drain To Source Voltage Vdss

20V

Drainsource On Resistancemax

0.033Ohm

Terminal Formu

NO LEAD

Ds Breakdown Voltagemin

20V

Rds On Max Id Vgs

33m Ω @ 4A, 4.5V

Jesd30 Code

S-PDSO-N6

Number Of Elements

2

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

6

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

410pF @ 10V

Case Connection

DRAIN

Fet Feature

Logic Level Gate, 1.5V Drive

Drain Currentmax Abs Id

4A