SSM6N44FE,LM

Teknik Özellikler

Number Of Elements

2

Transistor Application

SWITCHING

Çalışma Sıcaklığı

150°C TJ

Terminal Sayısı

6

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

8.5pF @ 3V

Fet Feature

Logic Level Gate

Turn On Delay Time

50 ns

Drain Currentmax Abs Id

0.1A

Drainsource On Resistancemax

7Ohm

Pin Sayısı

6

Temel Parça No

SSM6N44

Terminal Formu

FLAT

Radyasyon Dayanımı

No

Turn Off Delay Time

200 ns

Rds On Max Id Vgs

4 Ω @ 10mA, 4V

Gate To Source Voltage Vgs

20V

Vgsth Max Id

1.5V @ 100μA

Number Of Channels

2

Manufacturer Package Identifier

SON6-P-0.50

Fet Type

2 N-Channel (Dual)

Yayın Yılı

2009

Drain To Source Breakdown Voltage

30V

Power Dissipation

150mW

Yükseklik

600μm

Max Power Dissipation

150mW

Montaj

Surface Mount

Montaj Tipi

Surface Mount

Drain To Source Voltage Vdss

30V

Kılıf / Paket

SOT-563, SOT-666

Element Configuration

Dual

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

100mA

Parça Durumu

Active

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fabrika Tedarik Süresi

16 Weeks

RoHS Durumu

RoHS Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Max Junction Temperature Tj

150°C