SSM6N35AFE,LF

Teknik Özellikler

Kılıf / Paket

SOT-563, SOT-666

Gate Charge Qg Max Vgs

0.34nC @ 4.5V

Ambalaj

Tape & Reel (TR)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Fabrika Tedarik Süresi

12 Weeks

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Max

250mW

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

RoHS Durumu

RoHS Compliant

Feedback Capmax Crss

10 pF

Fet Type

2 N-Channel (Dual)

Vgsth Max Id

1V @ 100μA

Montaj Tipi

Surface Mount

Drain To Source Voltage Vdss

20V

Drainsource On Resistancemax

2.4Ohm

Terminal Formu

FLAT

Rds On Max Id Vgs

1.1 Ω @ 150mA, 4.5V

Ds Breakdown Voltagemin

20V

Jesd30 Code

R-PDSO-F6

Yüzey Montaj

YES

Transistor Application

SWITCHING

Number Of Elements

2

Terminal Sayısı

6

Çalışma Sıcaklığı

150°C

Current Continuous Drain Id25

250mA Ta

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Abs Id

0.25A

Fet Feature

Logic Level Gate, 1.2V Drive

Input Capacitance Ciss Max Vds

36pF @ 10V