SSM6N15AFU,LF

Teknik Özellikler

Drain To Source Voltage Vdss

30V

Montaj

Surface Mount

Montaj Tipi

Surface Mount

Power Dissipation

300mW

Max Power Dissipation

300mW

Vgsth Max Id

1.5V @ 100μA

Yayın Yılı

2014

Drain To Source Breakdown Voltage

30V

Fet Type

2 N-Channel (Dual)

RoHS Durumu

RoHS Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Parça Durumu

Active

Fabrika Tedarik Süresi

12 Weeks

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ambalaj

Tape & Reel (TR)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Continuous Drain Current Id

100mA

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Fet Feature

Logic Level Gate

Input Capacitance Ciss Max Vds

13.5pF @ 3V

Drain Currentmax Abs Id

0.1A

Operating Mode

ENHANCEMENT MODE

REACH Uyumluluk Kodu

unknown

Çalışma Sıcaklığı

150°C TJ

Terminal Sayısı

6

Number Of Elements

2

Transistor Application

SWITCHING

Jesd30 Code

R-PDSO-G6

Gate To Source Voltage Vgs

20V

Rds On Max Id Vgs

3.6 Ω @ 10mA, 4V

Terminal Formu

GULL WING

Drainsource On Resistancemax

6Ohm