SSM6L09FUTE85LF

Teknik Özellikler

Rds On Max Id Vgs

700m Ω @ 200MA, 10V

Turn Off Delay Time

85 ns

Gate To Source Voltage Vgs

-1.8V

Çalışma Sıcaklığı

150°C TJ

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

400mA 200mA

Drain Currentmax Abs Id

0.4A

Turn On Delay Time

85 ns

Input Capacitance Ciss Max Vds

20pF @ 5V

Fet Feature

Logic Level Gate

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Continuous Drain Current Id

200mA

Element Configuration

Dual

Ambalaj

Cut Tape (CT)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fabrika Tedarik Süresi

12 Weeks

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

RoHS Compliant

Fet Type

N and P-Channel

Yayın Yılı

2014

Drain To Source Breakdown Voltage

30V

Number Of Channels

2

Vgsth Max Id

1.8V @ 100μA

Max Power Dissipation

300mW

Montaj Tipi

Surface Mount

Montaj

Surface Mount

Polaritychannel Type

N-CHANNEL AND P-CHANNEL