Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Currentcollector Ic Max
- 100mA
- Voltage Collector Emitter Breakdown Max
- 50V
- Ambalaj
- Tape & Reel (TR)
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 10 Weeks
- Power Max
- 100mW
- Resistor Emitter Base R2
- 47k Ω
- Vce Saturation Max Ib Ic
- 300mV @ 250μA, 5mA
- Yüzey Montaj
- YES
- Resistor Base R1
- 2.2k Ω, 22k Ω
- Transistor Type
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Montaj Tipi
- Surface Mount
- Current Collector Cutoff Max
- 500nA
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 10mA 5V
- Polaritychannel Type
- NPN/PNP
- Number Of Elements
- 2
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kılıf / Paket
- SOT-563, SOT-666
- Power Dissipationmax Abs
- 0.1W
- RoHS Durumu
- RoHS Compliant
- Frequency Transition
- 200MHz 250MHz
İlgili Ürünler
Stokta
Panjit
2SC164S_R1_00001
BJT Transistors Arrays
Diodes Incorporated
ACX114EUQ-13R
BJT Transistors Arrays
Diodes Incorporated
ACX114EUQ-7R
BJT Transistors Arrays
Diodes Incorporated
ACX114YUQ-13R
BJT Transistors Arrays
Diodes Incorporated
ACX114YUQ-7R
BJT Transistors Arrays
Diodes Incorporated
ACX115EUQ-13R
BJT Transistors Arrays
Diodes Incorporated
ACX115EUQ-7R
BJT Transistors Arrays
Diodes Incorporated
ACX124EUQ-13R
BJT Transistors Arrays

