Adet bazlı fiyat
- 1+ adet$0.36
- 10+ adet$0.34
- 100+ adet$0.32
- 500+ adet$0.30
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Transistor Polarity
- NPN, PNP
- Power Max
- 100mW
- Configuration
- Dual
- Resistor Emitter Base R2
- 47kOhms
- Vce Saturation Max Ib Ic
- 300mV @ 250μA, 5mA
- Transistor Type
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Montaj Tipi
- Surface Mount
- Kılıf / Paket
- SOT-563, SOT-666
- Maks. Çalışma Sıcaklığı
- + 150 C
- Tedarikçi Cihaz Paketi
- ES6
- Frequency Transition
- 200MHz, 250MHz
- Currentcollector Ic Max
- 100mA
- Voltage Collector Emitter Breakdown Max
- 50V
- Dc Collectorbase Gain Hfe Min
- 80 at 10 mA, 5 V
- Maximum Operating Frequency
- 200 MHz, 250 MHz
- Ürün Durumu
- Active
- Resistor Base R1
- 10kOhms
- Current Collector Cutoff Max
- 500nA
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 10mA, 5V
- Typical Resistor Ratio
- 0.213
- Typical Input Resistor
- 10 kOhms
- Pd Power Dissipation
- 100 mW
- Collector Emitter Voltage Vceo Max
- 50 V
- Montaj Stili
- SMD/SMT
- Continuous Collector Current
- 100 mA
İlgili Ürünler
Stokta
Panjit
2SC164S_R1_00001
BJT Transistors Arrays
Diodes Incorporated
ACX114EUQ-13R
BJT Transistors Arrays
Diodes Incorporated
ACX114EUQ-7R
BJT Transistors Arrays
Diodes Incorporated
ACX114YUQ-13R
BJT Transistors Arrays
Diodes Incorporated
ACX114YUQ-7R
BJT Transistors Arrays
Diodes Incorporated
ACX115EUQ-13R
BJT Transistors Arrays
Diodes Incorporated
ACX115EUQ-7R
BJT Transistors Arrays
Diodes Incorporated
ACX124EUQ-13R
BJT Transistors Arrays