Adet bazlı fiyat
- 1+ adet$0.35
- 10+ adet$0.33
- 100+ adet$0.31
- 500+ adet$0.29
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Transistor Type
- 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Resistor Base R1
- 4.7k Ω
- Polaritychannel Type
- PNP
- Collector Emitter Voltage Vceo
- 300mV
- Montaj Tipi
- Surface Mount
- Montaj
- Surface Mount
- Max Power Dissipation
- 100mW
- Max Collector Current
- 100mA
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 1mA 5V
- Yayın Yılı
- 2014
- RoHS Durumu
- RoHS Compliant
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Power Max
- 100mW
- Max Breakdown Voltage
- 50V
- Fabrika Tedarik Süresi
- 12 Weeks
- Ambalaj
- Tape & Reel (TR)
- Kılıf / Paket
- SOT-553
- Current Collector Cutoff Max
- 100nA ICBO
- REACH Uyumluluk Kodu
- unknown
- Collectoremitter Breakdown Voltage
- 50V
- Number Of Elements
- 2
- Frequency Transition
- 200MHz
- Vce Saturation Max Ib Ic
- 300mV @ 250μA, 5mA
İlgili Ürünler
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