Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Number Of Elements
- 2
- Frequency Transition
- 200MHz
- Hfemin
- 50
- Resistor Emitter Base R2
- 10k Ω
- Collectoremitter Breakdown Voltage
- 50V
- Current Collector Cutoff Max
- 500nA
- Vce Saturation Max Ib Ic
- 300mV @ 250μA, 5mA
- Polarity
- PNP
- Continuous Collector Current
- -100mA
- Dc Current Gain Hfe Min Ic Vce
- 50 @ 10mA 5V
- Yayın Yılı
- 2014
- Max Power Dissipation
- 200mW
- Max Collector Current
- 100mA
- Collector Emitter Voltage Vceo
- 300mV
- Montaj
- Surface Mount
- Montaj Tipi
- Surface Mount
- Transistor Type
- 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Resistor Base R1
- 10k Ω
- Kılıf / Paket
- 5-TSSOP, SC-70-5, SOT-353
- Ambalaj
- Cut Tape (CT)
- Element Configuration
- Dual
- Parça Durumu
- Discontinued
- Fabrika Tedarik Süresi
- 12 Weeks
- Max Breakdown Voltage
- 50V
- Power Max
- 200mW
- RoHS Durumu
- RoHS Compliant
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Element Material
- SILICON
- Emitter Base Voltage Vebo
- -10V
İlgili Ürünler
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