RN2701JE(TE85L,F)

Teknik Özellikler

RoHS Durumu

RoHS Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Parça Durumu

Active

Fabrika Tedarik Süresi

12 Weeks

Max Breakdown Voltage

50V

Power Max

100mW

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

SOT-553

Transistor Type

2 PNP - Pre-Biased (Dual) (Emitter Coupled)

Polaritychannel Type

PNP

Resistor Base R1

4.7k Ω

Collector Emitter Voltage Vceo

300mV

Montaj Tipi

Surface Mount

Montaj

Surface Mount

Max Collector Current

100mA

Max Power Dissipation

100mW

Dc Current Gain Hfe Min Ic Vce

30 @ 10mA 5V

Yayın Yılı

2014

Vce Saturation Max Ib Ic

300mV @ 250μA, 5mA

Current Collector Cutoff Max

100nA ICBO

Resistor Emitter Base R2

4.7k Ω

Collectoremitter Breakdown Voltage

50V

REACH Uyumluluk Kodu

unknown

Number Of Elements

2

Frequency Transition

200MHz