RN1968FE(TE85L,F)

Teknik Özellikler

Transistor Type

2 NPN - Pre-Biased (Dual)

RoHS Durumu

RoHS Compliant

Power Dissipationmax Abs

0.1W

Vce Saturation Max Ib Ic

300mV @ 250μA, 5mA

Resistor Emitter Base R2

47k Ω

Voltage Collector Emitter Breakdown Max

50V

Yüzey Montaj

YES

Currentcollector Ic Max

100mA

Dc Current Gain Hfe Min Ic Vce

80 @ 10mA 5V

Yayın Yılı

2014

Frequency Transition

250MHz

Current Collector Cutoff Max

100nA ICBO

Polaritychannel Type

NPN

Montaj Tipi

Surface Mount

Resistor Base R1

22k Ω

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Max

100mW

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Kılıf / Paket

SOT-563, SOT-666

Number Of Elements

2