RN1962TE85LF

Teknik Özellikler

Yayın Yılı

2014

Montaj

Surface Mount

Vce Saturation Max Ib Ic

300mV @ 250μA, 5mA

RoHS Durumu

RoHS Compliant

Element Configuration

Dual

Number Of Elements

2

Emitter Base Voltage Vebo

10V

Transistor Element Material

SILICON

Max Collector Current

100mA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Collector Current

100mA

Collectoremitter Breakdown Voltage

50V

Max Breakdown Voltage

50V

Frequency Transition

250MHz

Collector Emitter Voltage Vceo

300mV

Current Collector Cutoff Max

100nA ICBO

Transistor Type

2 NPN - Pre-Biased (Dual)

Fabrika Tedarik Süresi

10 Weeks

Resistor Emitter Base R2

10k Ω

Dc Current Gain Hfe Min Ic Vce

50 @ 10mA 5V

Ambalaj

Cut Tape (CT)

Max Power Dissipation

500mW

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Montaj Tipi

Surface Mount

REACH Uyumluluk Kodu

unknown

Resistor Base R1

10k Ω

Parça Durumu

Active

Polarity

NPN

Hfemin

50