RN1911FETE85LF

Teknik Özellikler

Max Power Dissipation

100mW

Ambalaj

Cut Tape (CT)

Kılıf / Paket

SOT-563, SOT-666

Parça Durumu

Discontinued

Resistor Base R1

10k Ω

REACH Uyumluluk Kodu

unknown

Montaj Tipi

Surface Mount

Polarity

NPN

Hfemin

120

Max Breakdown Voltage

50V

Collectoremitter Breakdown Voltage

50V

Continuous Collector Current

100mA

Collector Emitter Voltage Vceo

300mV

Current Collector Cutoff Max

100nA ICBO

Frequency Transition

250MHz

Fabrika Tedarik Süresi

12 Weeks

Transistor Type

2 NPN - Pre-Biased (Dual)

Dc Current Gain Hfe Min Ic Vce

120 @ 1mA 5V

Element Configuration

Dual

Number Of Elements

2

Emitter Base Voltage Vebo

5V

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Collector Current

100mA

Montaj

Surface Mount

Yayın Yılı

2014

Vce Saturation Max Ib Ic

300mV @ 250μA, 5mA

RoHS Durumu

RoHS Compliant