RN1901FETE85LF

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Collector Current

100mA

Element Configuration

Dual

Number Of Elements

2

Emitter Base Voltage Vebo

10V

Transistor Element Material

SILICON

Vce Saturation Max Ib Ic

300mV @ 250μA, 5mA

RoHS Durumu

RoHS Compliant

Montaj

Surface Mount

Yayın Yılı

2014

Parça Durumu

Active

Resistor Base R1

4.7k Ω

REACH Uyumluluk Kodu

unknown

Montaj Tipi

Surface Mount

Polarity

NPN

Hfemin

30

Max Power Dissipation

100mW

Ambalaj

Cut Tape (CT)

Kılıf / Paket

SOT-563, SOT-666

Fabrika Tedarik Süresi

12 Weeks

Resistor Emitter Base R2

4.7k Ω

Transistor Type

2 NPN - Pre-Biased (Dual)

Dc Current Gain Hfe Min Ic Vce

30 @ 10mA 5V

Max Breakdown Voltage

50V

Collectoremitter Breakdown Voltage

50V

Continuous Collector Current

100mA

Collector Emitter Voltage Vceo

300mV

Current Collector Cutoff Max

100nA ICBO

Frequency Transition

250MHz