RN1406S,LF(D

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN RESISTOR

Collector Emitter Voltage Vceo

300mV

Collectoremitter Breakdown Voltage

50V

Polaritychannel Type

NPN

Transistor Type

NPN - Pre-Biased

Power Max

200mW

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 10

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vce Saturation Max Ib Ic

300mV @ 250μA, 5mA

Resistor Base R1

4.7 k Ω

Yayın Yılı

2014

Dc Current Gain Hfe Min Ic Vce

80 @ 10mA 5V

Ambalaj

Tape & Reel (TR)

REACH Uyumluluk Kodu

unknown

Current Collector Cutoff Max

500nA

Frequency Transition

250MHz

Terminal Sayısı

3

Montaj Tipi

Surface Mount

Parça Durumu

Obsolete

Number Of Elements

1

Terminal Pozisyonu

DUAL

RoHS Durumu

RoHS Compliant

Jesd30 Code

R-PDSO-G3

Resistor Emitter Base R2

47 k Ω

Max Collector Current

100mA

Transition Frequency

250MHz

Max Power Dissipation

200mW

Montaj

Surface Mount