Adet bazlı fiyat
- 1+ adet$0.57
- 10+ adet$0.53
- 100+ adet$0.50
- 500+ adet$0.47
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Pd Power Dissipation
- 100 mW
- Power Max
- 100mW
- Current Collector Cutoff Max
- 100nA (ICBO)
- Part Aliases
- HN1A01FE-Y,LXHF(B
- Frequency Transition
- 80MHz
- Dc Collectorbase Gain Hfe Min
- 120 at -2 mA, - 6 V
- Transistor Type
- 2 PNP (Dual)
- Ürün Tipi
- BJTs - Bipolar Transistors
- Çalışma Sıcaklığı
- 150°C (TJ)
- Currentcollector Ic Max
- 150mA
- Kılıf / Paket
- SOT-563, SOT-666
- Collector Emitter Voltage Vceo Max
- 50 V
- Fabrika Paket Adedi
- 4000
- Seri
- Automotive, AEC-Q101
- Maks. Çalışma Sıcaklığı
- + 150 C
- Collectoremitter Saturation Voltage
- 100 mV
- RoHS
- Details
- Vce Saturation Max Ib Ic
- 300mV @ 10mA, 100mA
- Continuous Collector Current
- 150 mA
- Technology
- Si
- Configuration
- Dual
- Montaj Tipi
- Surface Mount
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 2mA, 6V
- Ürün Durumu
- Active
- Transistor Polarity
- PNP
- Collector Base Voltage Vcbo
- 50 V
- Ambalaj
- MouseReel
- Voltage Collector Emitter Breakdown Max
- 50V
- Tedarikçi Cihaz Paketi
- ES6
- Dc Current Gain Hfe Max
- 400 at -2 mA, - 6 V
- Montaj Stili
- SMD/SMT
- Qualification
- AEC-Q200
- Emitter Base Voltage Vebo
- 5 V
- Gain Bandwidth Product Ft
- 80 MHz
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