GT30J341,Q

Teknik Özellikler

Çalışma Sıcaklığı

175°C (TJ)

Paket

Tray

Ambalaj

Tray

Configuration

Single

REACH Uyumluluk Kodu

unknown

Continuous Collector Current Ic Max

120 A

Montaj Tipi

Through Hole

Ürün Tipi

IGBT Transistors

RoHS

Details

Fabrika Tedarik Süresi

12 Weeks

Temel Ürün No

GT30J341

Part Life Cycle Code

Active

Switching Energy

800μJ (on), 600μJ (off)

Current Collector Pulsed Icm

120 A

Currentcollector Ic Max

59 A

Montaj Stili

Through Hole

Td Onoff25c

80ns/280ns

Maks. Çalışma Sıcaklığı

+ 175 C

Risk Rank

5.67

Giriş Tipi

Standard

Ürün Durumu

Active

Ihs Manufacturer

TOSHIBA CORP

Technology

Si

Test Conditions

300V, 30A, 24Ohm, 15V

Power Max

230 W

Voltage Collector Emitter Breakdown Max

600 V

Collectoremitter Saturation Voltage

1.5 V

Continuous Collector Current At25 C

59 A

Maximum Gate Emitter Voltage

- 25 V, + 25 V

Reverse Recovery Time Trr

50 ns

Collector Emitter Voltage Vceo Max

600 V

Minimum Operating Temperature

- 55 C

Tedarikçi Cihaz Paketi

TO-3P(N)

Kılıf / Paket

TO-3P-3, SC-65-3

Üretici Parça No

GT30J341,Q

Package Description

,

Vceon Max Vge Ic

2V @ 15V, 30A

Fabrika Paket Adedi

100

Pd Power Dissipation

230 W