Adet bazlı fiyat
- 1+ adet$0.50
- 10+ adet$0.47
- 100+ adet$0.44
- 500+ adet$0.42
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Transistor Element Material
- SILICON
- Pin Sayısı
- 3
- Terminal Formu
- GULL WING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Jesd30 Code
- R-PDSO-G3
- Max Power Dissipation
- 100mW
- Qualification Status
- Not Qualified
- Gain Bandwidth Product
- 10 GHz
- Collectorbase Capacitancemax
- 0.85pF
- Max Breakdown Voltage
- 10V
- ECCN Kodu
- EAR99
- Transition Frequency
- 10000MHz
- Highest Frequency Band
- ULTRA HIGH FREQUENCY B
- Noise Figure Db Typ F
- 1.8dB @ 2GHz
- Collectoremitter Breakdown Voltage
- 10V
- Terminal Pozisyonu
- DUAL
- Additional Feature
- LOW NOISE
- Hfemin
- 50
- Emitter Base Voltage Vebo
- 1.5V
- Collector Base Voltage Vcbo
- 20V
- REACH Uyumluluk Kodu
- unknown
- Montaj
- Surface Mount
- Power Max
- 100mW
- Contact Plating
- Copper, Silver, Tin
- Gain
- 13dB ~ 7.5dB
- Collector Emitter Voltage Vceo
- 10V
- Parça Durumu
- Active
- Transistor Type
- NPN
- Montaj Tipi
- Surface Mount
- Ambalaj
- Cut Tape (CT)
- RoHS Durumu
- RoHS Compliant
- Max Collector Current
- 15mA
- Dc Current Gain Hfe Min Ic Vce
- 50 @ 7mA 6V
- Yayın Yılı
- 2009
- Fabrika Tedarik Süresi
- 16 Weeks
- Element Configuration
- Single
- HTS Kodu
- 8541.21.00.75
- Number Of Elements
- 1
- Transistor Application
- AMPLIFIER
- Çalışma Sıcaklığı
- 125°C TJ
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