Adet bazlı fiyat
- 1+ adet$0.16
- 10+ adet$0.15
- 100+ adet$0.14
- 500+ adet$0.14
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Transistor Application
- AMPLIFIER
- Fabrika Tedarik Süresi
- 12 Weeks
- Çalışma Sıcaklığı
- 125°C TJ
- Emitter Base Voltage Vebo
- 5V
- Ambalaj
- Tape & Reel (TR)
- Collector Emitter Voltage Vceo
- 50V
- Jesd30 Code
- R-PDSO-G3
- Collector Base Voltage Vcbo
- 60V
- Collectoremitter Breakdown Voltage
- 50V
- Hfemin
- 70
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Montaj
- Surface Mount
- Polaritychannel Type
- NPN
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Collectoremitter Saturation Voltage
- 100mV
- Temel Parça No
- 2SC2712
- RoHS Durumu
- RoHS Compliant
- Terminal Sayısı
- 3
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Current Collector Cutoff Max
- 100nA ICBO
- Transition Frequency
- 80MHz
- Vce Saturation Max Ib Ic
- 250mV @ 10mA, 100mA
- Terminal Pozisyonu
- DUAL
- Continuous Collector Current
- 150mA
- REACH Uyumluluk Kodu
- unknown
- Yayın Yılı
- 2011
- Montaj Tipi
- Surface Mount
- Number Of Elements
- 1
- Max Power Dissipation
- 150mW
- Max Breakdown Voltage
- 50V
- Element Configuration
- Single
- Max Collector Current
- 150mA
- Transistor Type
- NPN
- Terminal Formu
- GULL WING
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 2mA 6V
- Additional Feature
- LOW NOISE
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gain Bandwidth Product
- 80MHz
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