TK8P65W

Teknik Özellikler

Terminal Formu

GULL WING

Package Shape

RECTANGULAR

Yüzey Montaj

YES

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Application

SWITCHING

Part Life Cycle Code

Active

Terminal Pozisyonu

SINGLE

Number Of Terminals

2

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

650 V

Fabrika Tedarik Süresi

20 Weeks

REACH Uyumluluk Kodu

unknown

Pulsed Drain Currentmax Idm

31.2 A

Exterior Housing Material

1

Jesd30 Code

R-PSSO-G2

Package Body Material

PLASTIC/EPOXY

Case Connection

DRAIN

Avalanche Energy Rating Eas

102 mJ

Package Style

SMALL OUTLINE

Package Description

SMALL OUTLINE, R-PSSO-G2

Drainsource On Resistancemax

0.67 Ω

Polaritychannel Type

N-CHANNEL

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Id

7.8 A

Ihs Manufacturer

TOSHIBA CORP

Transistor Element Material

SILICON