TJ50S06M3L

Teknik Özellikler

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

100 A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drainsource On Resistancemax

0.0174 Ω

Terminal Pozisyonu

SINGLE

Operating Temperaturemax

175 °C

Package Style

SMALL OUTLINE

Operating Mode

ENHANCEMENT MODE

Polaritychannel Type

P-CHANNEL

Avalanche Energy Rating Eas

120 mJ

Terminal Formu

GULL WING

Package Body Material

PLASTIC/EPOXY

Power Dissipationmax Abs

90 W

Ihs Manufacturer

TOSHIBA CORP

Reference Standard

AEC-Q101

Feedback Capmax Crss

410 pF

ECCN Kodu

EAR99

Package Shape

RECTANGULAR

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

Transistor Application

SWITCHING

Package Description

SMALL OUTLINE, R-PSSO-G2

Number Of Terminals

2

Ds Breakdown Voltagemin

60 V

Part Life Cycle Code

Active

Yüzey Montaj

YES

Jesd30 Code

R-PSSO-G2

Number Of Elements

1

REACH Uyumluluk Kodu

unknown

Drain Currentmax Id

50 A