MG100Q2YS11

Teknik Özellikler

Collectoremitter Voltagemax

1200 V

Configuration

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Qualification Status

Not Qualified

Fall Timemax Tf

1000 ns

Transistor Element Material

SILICON

Collector Currentmax Ic

100 A

Polaritychannel Type

N-CHANNEL

Risk Rank

5.72

RoHS

Non-Compliant

Package Shape

RECTANGULAR

Terminal Formu

UNSPECIFIED

Yüzey Montaj

NO

Jesd30 Code

R-PUFM-X7

Ihs Manufacturer

TOSHIBA CORP

Vcesatmax

2.7 V

Power Dissipationmax Abs

800 W

Number Of Terminals

7

Terminal Pozisyonu

UPPER

Package Body Material

PLASTIC/EPOXY

Üretici Parça No

MG100Q2YS11

Package Style

FLANGE MOUNT

Gateemitter Voltagemax

20 V

Part Life Cycle Code

Active

Transistor Application

POWER CONTROL

Operating Temperaturemax

150 °C

Number Of Elements

2

REACH Uyumluluk Kodu

unknown

Package Description

FLANGE MOUNT, R-PUFM-X7