TPS1120DR

Teknik Özellikler

Fet Type

2 P-Channel (Dual)

Thickness

1.58mm

Pin Sayısı

8

Additional Feature

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

Gate To Source Voltage Vgs

2V

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Montaj

Surface Mount

Transistor Element Material

SILICON

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Vgsth Max Id

1.5V @ 250μA

Kurşunsuz

Lead Free

Fabrika Tedarik Süresi

6 Weeks

Akım Değeri

-1.17A

Number Of Elements

2

Contact Plating

Gold

Kurşunsuz Kodu

yes

Parça Durumu

Active

Turn Off Delay Time

13 ns

Max Power Dissipation

840mW

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Çalışma Sıcaklığı

-40°C~150°C TJ

Fall Time Typ

10 ns

Genişlik

3.91mm

Continuous Drain Current Id

1.17A

Uzunluk

4.9mm

JESD-609 Kodu

e4

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

260

Yükseklik

1.75mm

Drainsource On Resistancemax

0.4Ohm

Power Dissipation

840mW

Rds On Max Id Vgs

180m Ω @ 1.5A, 10V

Ambalaj

Cut Tape (CT)

Gate Charge Qg Max Vgs

5.45nC @ 10V

Fet Feature

Logic Level Gate

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Mode

ENHANCEMENT MODE