NDS355AN

Teknik Özellikler

Fall Time Typ

32 ns

Yayın Yılı

1998

Akım Değeri

1.7A

Drain To Source Breakdown Voltage

30V

Number Of12bit Ad Converters

16

Direnç

85mOhm

Rise Time

32ns

Power Dissipation

500mW

Saturation Current

1

Number Of16bit Timers

18

HTS Kodu

8541.21.00.95

Gate To Source Voltage Vgs

20V

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Continuous Drain Current Id

1.7A

Operating Mode

ENHANCEMENT MODE

Additional Feature

LOGIC LEVEL COMPATIBLE

Drain Currentmax Id

0.0016 A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ihs Manufacturer

NATIONAL SEMICONDUCTOR CORP

Clock Frequency

250MHz

Kind Of Architecture

Cortex M33

Number Of Elements

1

Case

VFQFPN68

Nominal Vgs

1.6 V

Part Life Cycle Code

Transferred

Jesd30 Code

R-PDSO-G3

Pin Sayısı

3

Input Capacitance Ciss Max Vds

195pF @ 15V

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

Turn Off Delay Time

13 ns

Family

STM32H5

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Kaplaması

MATTE TIN

Memory

640kB SRAM

Mounting

SMD

Exterior Housing Material

1

Dual Supply Voltage

30V

Çalışma Sıcaklığı

-40...85°C

Genişlik

3.05mm