CSD88539NDT

Teknik Özellikler

Tepe Reflow Sıcaklığı (°C)

260

Weight

540.001716mg

Terminal Sayısı

8

Parça Durumu

Active

Drain Currentmax Abs Id

6.3A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Voltage Vdss

60V

Fet Feature

Logic Level Gate

Gate To Source Voltage Vgs

20V

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Input Capacitance Ciss Max Vds

741pF @ 30V

Ambalaj

Tape & Reel (TR)

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

3.6V @ 250μA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Element Configuration

Dual

Thickness

1.58mm

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

60V

Montaj Tipi

Surface Mount

Drainsource On Resistancemax

0.034Ohm

Seri

NexFET™

Threshold Voltage

3V

Pin Sayısı

8

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Çalışma Sıcaklığı

-55°C~150°C TJ

Contact Plating

Gold

Montaj

Surface Mount

Terminal Formu

GULL WING

Uzunluk

4.9mm

Rise Time

9ns

Continuous Drain Current Id

15A

Max Power Dissipation

2.1W

Gate Charge Qg Max Vgs

9.4nC @ 10V

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Kurşunsuz Kodu

yes

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

6 Weeks