CSD88539ND

Teknik Özellikler

Contact Plating

Gold

Montaj

Surface Mount

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

9ns

Uzunluk

4.9mm

Continuous Drain Current Id

15A

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

9.4nC @ 10V

Operating Mode

ENHANCEMENT MODE

Radyasyon Dayanımı

No

Max Power Dissipation

2.1W

Fabrika Tedarik Süresi

6 Weeks

ECCN Kodu

EAR99

Kurşunsuz Kodu

yes

Additional Feature

AVALANCHE RATED

Transistor Application

SWITCHING

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Genişlik

3.91mm

Fall Time Typ

4 ns

Rds On Max Id Vgs

28m Ω @ 5A, 10V

Reach Svhc

No SVHC

JESD-609 Kodu

e4

Turn Off Delay Time

5 ns

Fet Type

2 N-Channel (Dual)

Number Of Elements

2

Turn On Delay Time

6 ns

Pulsed Drain Currentmax Idm

46A

Temel Parça No

CSD88539

Yükseklik

1.75mm

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

8

Weight

540.001716mg

Drain To Source Voltage Vdss

60V

Fet Feature

Standard

Drain Currentmax Abs Id

6.3A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

60V

Gate To Source Voltage Vgs

20V