CSD88537NDT

Teknik Özellikler

Transistor Element Material

SILICON

Pin Sayısı

8

Threshold Voltage

3V

Seri

NexFET™

Drainsource On Resistancemax

0.019Ohm

Montaj Tipi

Surface Mount

Power Dissipation

2.1W

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Element Configuration

Dual

Thickness

1.58mm

Input Capacitance Ciss Max Vds

1400pF @ 30V

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Gate To Source Voltage Vgs

20V

Vgsth Max Id

3.6V @ 250μA

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tape & Reel (TR)

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

260

Weight

540.001716mg

Terminal Sayısı

8

Fet Feature

Standard

Drain Currentmax Abs Id

8A

Drain To Source Breakdown Voltage

60V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Type

2 N-Channel (Dual)

Number Of Elements

2

Turn On Delay Time

6 ns

Temel Parça No

CSD88537

Yükseklik

1.75mm

Fall Time Typ

19 ns

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Genişlik

3.91mm

Rds On Max Id Vgs

15m Ω @ 8A, 10V

Reach Svhc

No SVHC

Number Of Channels

2

Turn Off Delay Time

5 ns

JESD-609 Kodu

e4

Max Junction Temperature Tj

150°C

Operating Mode

ENHANCEMENT MODE