CSD88537ND

Teknik Özellikler

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

8

Weight

540.001716mg

Parça Durumu

Active

Drain Currentmax Abs Id

8A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

60V

Drain To Source Voltage Vdss

60V

Fet Feature

Standard

Gate To Source Voltage Vgs

20V

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Input Capacitance Ciss Max Vds

1400pF @ 30V

Ambalaj

Tape & Reel (TR)

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

3.6V @ 250μA

Power Dissipation

2.1W

Element Configuration

Dual

Thickness

1.58mm

Transistor Element Material

SILICON

Seri

NexFET™

Drainsource On Resistancemax

0.019Ohm

Montaj Tipi

Surface Mount

Threshold Voltage

3V

Pin Sayısı

8

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Çalışma Sıcaklığı

-55°C~150°C TJ

Contact Plating

Gold

Montaj

Surface Mount

Terminal Formu

GULL WING

Rise Time

15ns

Uzunluk

4.9mm

Continuous Drain Current Id

15A

Radyasyon Dayanımı

No

Max Power Dissipation

2.1W

Gate Charge Qg Max Vgs

18nC @ 10V

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Kurşunsuz Kodu

yes

ECCN Kodu

EAR99