CSD87384M

Teknik Özellikler

Montaj

Surface Mount

Output Current Per Channel

30A

Parça Durumu

Active

Contact Plating

Gold

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

5

Tepe Reflow Sıcaklığı (°C)

260

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fet Feature

Logic Level Gate

Drain To Source Voltage Vdss

30V

Continuous Drain Current Id

30A

Uzunluk

5mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

NO LEAD

Input Capacitance Ciss Max Vds

1150pF @ 15V

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

9.2nC @ 4.5V

Max Power Dissipation

8W

Number Of Outputs

1

Vgsth Max Id

1.9V @ 250μA

Fabrika Tedarik Süresi

12 Weeks

ECCN Kodu

EAR99

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Genişlik

3.5mm

Kılıf / Paket

5-LGA

Terminal Pozisyonu

BOTTOM

Rds On Max Id Vgs

7.7m Ω @ 25A, 8V

JESD-609 Kodu

e4

Thickness

400μm

Max Output Current

95A

Fet Type

2 N-Channel (Half Bridge)

Ds Breakdown Voltagemin

30V

Number Of Elements

2

Transistor Element Material

SILICON