CSD87313DMST

Teknik Özellikler

Transistor Element Material

SILICON

Number Of Elements

2

Fet Type

2 N-Channel (Dual) Common Drain

Seri

NexFET™

Montaj Tipi

Surface Mount

Configuration

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Temel Parça No

CSD87313

Pin Sayısı

8

Kılıf / Paket

8-PowerWDFN

Avalanche Energy Rating Eas

67 mJ

Genişlik

3.3mm

Case Connection

SOURCE

Thickness

750μm

Drain To Source Resistance

5.5mOhm

Gate Charge Qg Max Vgs

28nC @ 4.5V

Operating Mode

ENHANCEMENT MODE

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Input Capacitance Ciss Max Vds

4290pF @ 15V

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Feedback Capmax Crss

200 pF

Fabrika Tedarik Süresi

6 Weeks

Kurşunsuz Kodu

yes

Vgsth Max Id

1.2V @ 250μA

Additional Feature

AVALANCHE RATED

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Sayısı

6

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Terminal Formu

NO LEAD

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

3.3mm

Fet Feature

Standard

Drain To Source Voltage Vdss

30V

Power Max

2.7W