CSD85312Q3E

Teknik Özellikler

Parça Durumu

Active

Terminal Sayısı

4

Tepe Reflow Sıcaklığı (°C)

260

Drain To Source Voltage Vdss

20V

Fet Feature

Logic Level Gate, 5V Drive

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

20V

Input Capacitance Ciss Max Vds

2390pF @ 10V

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Gate To Source Voltage Vgs

10V

Vgsth Max Id

1.4V @ 250μA

RoHS Durumu

ROHS3 Compliant

Feedback Capmax Crss

40 pF

Kurşunsuz

Contains Lead

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Dissipation

2.5W

Thickness

900μm

Transistor Element Material

SILICON

Pin Sayısı

8

Montaj Tipi

Surface Mount

Seri

NexFET™

Montaj

Surface Mount

Contact Plating

Gold

Çalışma Sıcaklığı

-55°C~150°C TJ

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current Id

39A

Rise Time

27ns

Uzunluk

3.3mm

Terminal Formu

NO LEAD

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

15.2nC @ 4.5V

Max Power Dissipation

2.5W

Additional Feature

AVALANCHE RATED

Fabrika Tedarik Süresi

8 Weeks

ECCN Kodu

EAR99

Kurşunsuz Kodu

yes

Transistor Application

SWITCHING

Fall Time Typ

6 ns

Genişlik

3.3mm