CSD85301Q2T

Teknik Özellikler

Seri

NexFET™

Drainsource On Resistancemax

0.039Ohm

Montaj Tipi

Surface Mount

Pin Sayısı

6

Threshold Voltage

900mV

Transistor Element Material

SILICON

Case Connection

DRAIN

Thickness

750μm

Element Configuration

Dual

Avalanche Energy Rating Eas

3.8 mJ

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tape & Reel (TR)

Vgsth Max Id

1.2V @ 250μA

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Input Capacitance Ciss Max Vds

469pF @ 10V

Gate To Source Voltage Vgs

10V

Drain Currentmax Abs Id

5A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

20V

Drain To Source Voltage Vdss

20V

Fet Feature

Logic Level Gate, 5V Drive

Terminal Sayısı

6

Weight

9.695537mg

Parça Durumu

Active

Temel Parça No

CSD85301

Number Of Elements

2

Turn On Delay Time

6 ns

Fet Type

2 N-Channel (Dual)

Turn Off Delay Time

14 ns

JESD-609 Kodu

e3

Rds On Max Id Vgs

27m Ω @ 5A, 4.5V

Number Of Channels

2

Reach Svhc

No SVHC

Fall Time Typ

15 ns

Kılıf / Paket

6-WDFN Exposed Pad

Genişlik

2mm

Transistor Application

SWITCHING

Additional Feature

AVALANCHE RATED

Fabrika Tedarik Süresi

12 Weeks