CSD83325LT

Teknik Özellikler

Fet Type

2 N-Channel (Dual) Common Drain

Turn On Delay Time

205 ns

Number Of Elements

2

Transistor Element Material

SILICON

Temel Parça No

CSD83325

Threshold Voltage

950mV

Pin Sayısı

6

Montaj Tipi

Surface Mount

Seri

NexFET™

Genişlik

2.16mm

Kılıf / Paket

6-XFBGA

Element Configuration

Dual

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fall Time Typ

589 ns

Reach Svhc

No SVHC

Terminal Pozisyonu

BOTTOM

Thickness

200μm

Turn Off Delay Time

711 ns

Gate Charge Qg Max Vgs

10.9nC @ 4.5V

Gate To Source Voltage Vgs

10V

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Operating Mode

ENHANCEMENT MODE

Drain To Source Resistance

9.9mOhm

Max Power Dissipation

2.3W

Vgsth Max Id

1.25V @ 250μA

Kurşunsuz Kodu

yes

Fabrika Tedarik Süresi

6 Weeks

Ambalaj

Tape & Reel (TR)

Feedback Capmax Crss

144 pF

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Transistor Application

SWITCHING

Parça Durumu

Active

Montaj

Surface Mount

Terminal Sayısı

6

Tepe Reflow Sıcaklığı (°C)

260

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Voltage Vdss

12V

Continuous Drain Current Id

8A