CSD75301W1015

Teknik Özellikler

Radyasyon Dayanımı

No

Max Power Dissipation

800mW

Gate Charge Qg Max Vgs

2.1nC @ 4.5V

Gate To Source Voltage Vgs

8V

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

195pF @ 10V

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Kurşunsuz

Lead Free

Feedback Capmax Crss

31 pF

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Kurşunsuz Kodu

yes

Vgsth Max Id

1V @ 250μA

Nominal Vgs

-700 mV

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

6

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Obsolete

Montaj

Surface Mount

Terminal Formu

BALL

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

20V

Rise Time

1.7ns

Fet Feature

Logic Level Gate

Continuous Drain Current Id

1.2A

Drain To Source Voltage Vdss

20V

Transistor Element Material

SILICON

Number Of Elements

2

Turn On Delay Time

3 ns

Fet Type

2 P-Channel (Dual)

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Drainsource On Resistancemax

0.19Ohm

Seri

NexFET™

Montaj Tipi

Surface Mount

Threshold Voltage

-700mV

Temel Parça No

CSD75301

Pin Sayısı

6

Rds On Max Id Vgs

100m Ω @ 1A, 4.5V