5962L8771002VPA

Teknik Özellikler

Architecture

VOLTAGE-FEEDBACK

ECCN Kodu

EAR99

Operating Temperaturemax

125 °C

Unity Gain Bwnom

1000

Yüzey Montaj

NO

Jesd30 Code

R-GDIP-T8

Güç

NO

Package Shape

RECTANGULAR

Qualification Status

Not Qualified

Terminal Kaplaması

TIN LEAD

Package Style

IN-LINE

Operating Temperaturemin

-55 °C

Lowoffset

NO

Supply Voltage Limitmax

32 V

Ihs Manufacturer

NATIONAL SEMICONDUCTOR CORP

Frequency Compensation

YES

Programmable Power

NO

Micropower

NO

Bias Currentmax Iib25c

0.06 μA

Voltage Gainmin

25000

Seated Heightmax

5.08 mm

Supply Voltagenom Vsup

5 V

Slew Ratenom

0.5 V/us

Screening Level

MIL-PRF-38535 Class V

Package Description

DIP, DIP8,.3

JESD-609 Kodu

e0

Genişlik

7.62 mm

Average Bias Currentmax Iib

0.001 μA

Lowbias

NO

Number Of Terminals

8

Input Offset Voltagemax

4000 μV

Commonmode Reject Rationom

70 dB

REACH Uyumluluk Kodu

unknown

Package Body Material

CERAMIC, GLASS-SEALED

Total Dose

50k Rad(Si) V

Fonksiyon Sayısı

2

Amplifier Type

OPERATIONAL AMPLIFIER

Terminal Pozisyonu

DUAL

Wideband

NO

Terminal Adımı

2.54 mm