TSM250N02DCQ RFG

Teknik Özellikler

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

5.8A Tc

Number Of Elements

2

Input Capacitance Ciss Max Vds

775pF @ 10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Jesd30 Code

S-PDSO-N6

Nem Hassasiyeti (MSL)

3 (168 Hours)

Drain To Source Voltage Vdss

20V

Transistor Application

SWITCHING

Feedback Capmax Crss

50 pF

Yayın Yılı

2015

Terminal Sayısı

6

Case Connection

DRAIN

Terminal Formu

NO LEAD

Çalışma Sıcaklığı

-55°C~150°C TJ

Ds Breakdown Voltagemin

20V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Yüzey Montaj

YES

Fet Type

2 N-Channel (Dual)

RoHS Durumu

ROHS3 Compliant

Drain Currentmax Abs Id

5.8A

Drainsource On Resistancemax

0.025Ohm

Power Max

620mW

Rds On Max Id Vgs

25m Ω @ 4A, 4.5V

Gate Charge Qg Max Vgs

7.7nC @ 4.5V

Transistor Element Material

SILICON

Ambalaj

Digi-Reel®

Fabrika Tedarik Süresi

18 Weeks

Fet Feature

Standard

Vgsth Max Id

800mV @ 250μA

Kılıf / Paket

6-VDFN Exposed Pad