MBR10H200CT

Teknik Özellikler

Paket

Tube

Jedec95 Code

TO-220AB

Jesd30 Code

R-PSFM-T3

Additional Feature

LOW POWER LOSS

Applications

EFFICIENCY

Üretici Parça No

MBR10H200CT

Diode Element Material

SILICON

Operating Temperature Junction

-55°C ~ 175°C

Number Of Elements

2

Ihs Manufacturer

TAIWAN SEMICONDUCTOR CO LTD

Package Description

GREEN, PLASTIC PACKAGE-3

Rohs Code

Yes

Package Shape

RECTANGULAR

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Tedarikçi Cihaz Paketi

TO-220AB

Terminal Pozisyonu

SINGLE

RoHS

Details

Voltage Forward Vf Max If

970 mV @ 10 A

Current Reverse Leakage Vr

5 µA @ 200 V

Terminal Formu

THROUGH-HOLE

Seri

MBR10H200CT

Yüzey Montaj

NO

Operating Temperaturemax

175 °C

Number Of Terminals

3

Kılıf / Paket

TO-220-3

Number Of Phases

1

Case Connection

CATHODE

Diode Configuration

1 Pair Common Cathode

REACH Uyumluluk Kodu

compliant

Birim Ağırlık

0.211644 oz

Temel Ürün No

MBR10

Operating Temperaturemin

-65 °C

Current Average Rectified Io Per Diode

10A

Montaj Tipi

Through Hole

Package Style

FLANGE MOUNT

Nonrep Pk Forward Currentmax

120 A

Package Body Material

PLASTIC/EPOXY

Diode Type

RECTIFIER DIODE

Voltage Dc Reverse Vr Max

200 V

ECCN Kodu

EAR99